CIS 125 TDI CMOS Imaging sensor
Teledyne e2v’s CIS125 image sensors combines charge domain TDI CCD functionality on a CMOS chip, offering the best of both technologies and is designed to be radiation tolerant.
Description
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Products & Services
QLS1046 Quad Cortex A72/4GB DDR4
Teledyne e2v
The QLS1046-4GB is the first solution from Teledyne e2v that integrates a QorIQ® processor built on the ARM® Cortex A72 cores, offering increased compute with decreased power consumption combined with multiple connectivity options. The transition from traditional QorIQ® to ARM® offers:
• Best-in-class performance, in excess of 45,000 CoreMark
• Improved packet classification and distribution for concentrated process cycles
• High-speed security protocol processing, including IPsec, SSL, TLS, and IKE.
The development board running Linux is currently available, and the device also supports the main certifiable Real Time Operating System such as VxWorks from Wind River, PikeOS from Sysgo, Deos from DDC-I, LynxOS from Lynx and Integrity from Green Hills. To know more about available Board Support Packages, get in touch with us.
EV10AS940 ADC
Teledyne e2v
The EV10AS940’s ultra wide bandwidth also enables multi-band operation thanks to the ability to digitize signals from L-Band to Ka-Band, combined with
multiple DDC channels.
With a 2.5W power consumption at 12.8 GSPS, the EV10AS940 helps phased array trends toward digital beamforming by providing outstanding RF performance with very low power consumption.
Main benefits
• Enables in-orbit payload reconfiguration in multiple bands
• Ultra wide input bandwidth 33 GHz (-3 dB)
• Single ended analog and clock inputs to ease RF interfaces
• Low power: 2.5 W (at 12.8 GSps)
• Digital features: DDC with I/Q decimation (x2 to x1024), Multi-NCOs (x4), Fast Frequency Hopping (3 hop modes) and Beamforming
• Multi ADC synchronization
LS1046 Processor
Teledyne e2v
The NXP QorIQ® LS1046A processor integrates quad 64-bit Arm® Cortex A72 cores with packet processing acceleration and high speed peripherals. It is pin-compatible with LS1023A, LS1043A and LS1088A SoC to provide performance scaling for 64- bit Arm, ranging from dual-A53 through octal-A53 to quad-A72 core processors, while maintaining hardware and software compatibility.
EV12AQ600 ADC
Teledyne e2v
The first 12-bit ADC to feature a Cross Point Switch (CPS), the EV12AQ600 can operate its four cores simultaneously, independently or paired, to assign its 6.4 GSps sampling speed across the user’s desired channel count:
- Quad-channel at 1.6 GSps
- Dual-channel at 3.2 GSps
- Single-channel at 6.4 GSps
SFDR in 4 channels mode without H2 and H3 harmonics is better than 70 dBFS at -1 dBFS up to 5980MHz.
EV12DD700 DAC
Teledyne e2v
At any band up to Ka, System designers can now migrate more RF hardware to digital code than ever before.
Enabling unprecendented levels of dynamic RF system reconfiguration on the fly.
EV12DD700 dual-channel DACs are capable of operating up into Ka-band frequencies and support beamforming applications. They have a 25GHz output bandwidth with only 3dB attenuation being witnessed, and can go way beyond this with just a little over 3dB attenuation. Built into each DAC is an array of sophisticated signal processing functionality. This encompasses a programmable anti-sinc filter and direct digital synthesis (DDS) capabilities, as well as a programmable complex mixer. Also included is a digital up-converter (with four interpolation stages, plus sinc compensation).
EV12DS130xG DAC
Teledyne e2v
The Noise Power Ratio (NPR) performance , which is 10 Bit equivalent at 3 GSPS, over more than 900 MHz instantaneous bandwidth, and the 70 dB linearity (SFDR, IMD) over full 1st Nyquist zone at 3 GSPS (NRZ feature), makes this product well suited for high-end applications such as arbitrary waveform generators and broadband DDS systems.
DDR4
Teledyne e2v
DDR4 ideal Companion-chips for Space grade devices such as processors, FPGAs SiP solutions & beyond…
The 4/8GB Radiation Tolerant DDR4 Memory Multi-Chip Package (MCP) is a Ultra High Density Memory Solution, targeting Space Embedded Systems & Applications.
This space-grade DDR4 memory enables elevated levels of performance, while taking up minimal board real estate – something that is certain to be of value in highly space-constrained, densely-packed satellite designs. It can be used in conjunction with processors and FPGAs having a DDR4 controller, and is also available embedded on Teledyne e2v Space version of Qormino® Common Compute Platform together with a Space version of LS1046 quad-core processor (QLS1046-4GB). Together with the DDR4 memory, a complete radiation and application datapackage is available allowing designers to develop their board quickly and with minimum risk.
Space Key Features
Space Qualification
• Up to NASA Level 1 (based on NASA EEE-INST-002 – Section M4 – PEMs)
• Up to ECSS Class 1 (ECSS-Q-ST-60-13C)
Radiation Tolerance
• SEL LET Threshold > 60.88 MeV.cm²/mg
• SEU evaluated from LET 2.6 MeV.cm²/mg & Upset cross-section @ 60.88 MeV.cm²/mg = 8.73E-12 cm²/bit
• SEFI evaluated from LET 2.6 MeV.cm²/mg & SEFI cross-section @ 60.88 MeV.cm²/mg = 4.17E-4 cm²/device
• TID: 100 krad(Si)
High Performances, Compact, and Fault Tolerant
• 4GB and 8GB densities;
• 72 bits bus width - (Can typically be used as 64 bits data + 8 bits ECC, offering single-bit error correction, and dual-bit error detection)
• 2.1 GT/s and 2.4GT/s (up to 150Gbps) transfer speeds
• Dimensions 15mm x 20mm x 1.92mm
• Temperature range [-40 ; +105]°C or [-55 ; +125]°C
CIS120 CMOS imaging sensor
Teledyne e2v
Key specifications of the CIS120 include a resolution of 2048 x 2048 and back-illuminated 10µm square pixels with a quantum efficiency of 90% at 550 nm (typical) for outstanding low light sensitivity. The sensor offers both a rolling shutter mode with a frame rate of 30 fps (8 bit) and a global shutter mode with a frame rate of 20 fps (12 bit). A combination of low readout noise and on-chip analogue-to-digital conversion provides excellent image quality.
Key features include:
- Good latch-up immunity and high SEU threshold by design and is resistant to ionising radiation by process choice
- Pixel read timing is set by an on-chip sequencer to simplify use and to reduce pin count
- A column parallel ADC is used to quantize each row of pixels in turn and is controlled by its own sequencer
- Resolution can be set anywhere from 8 to 14 bits
- Four LVDS channels output the image data and are controlled by the readout sequencer to scan along each row in turn. Two LVDS synchronisation channels allow accurate data sampling
- All configuration settings are programmed over an SPI. This includes shutter mode, ADC resolution and bias current values
- Package options include ceramic PGA and metal and ceramic three-side butting designs for use in mosaic focal planes
- CIS120 is stitched, so other sizes are possible from 2048 × 1024, up to 2048 × 8192 pixels, without the cost of new masks as well as other customer-specific requirements such as anti-reflective coatings
Helix Travelling Wave Tubes
Teledyne e2v
We are market leaders in the design, development and manufacture of helix travelling wave tubes (TWTs), travelling wave tube amplifiers (TWTAs) and microwave power modules (MPMs).
TWTs remain the best source for the efficient generation of microwave power over broad frequency bandwidths. Technological advances have enabled them to become smaller, lighter and more efficient than ever.
Modern TWTs are designed to sustain at least 20,000 hours of continuous operation. Many of our devices have been in service for three to five times longer than this.
Our state-of-the-art technology is used on nearly all of the major electronic warfare, radar and communication platforms across the world and a wide range of military applications.
Description
With on-chip clock drivers and ADCs, this sensor offers a true integrated solution. These sensors are available both as backside illuminated (BSI) as well as front-side illuminated (FSI). These TDI CMOS image sensors
include six Multispectral bands (MS) and four Panchromatic bands (PAN), all in a single integrated CMOS die and package. With 8k columns for each multispectral band and 16k columns for each Panchromatic band along with
lateral anti-blooming (LAB), and continuous vertical clocking, the sensors guarantee exceptional images with very high MTF. With 5μm x 5μm (PAN) and 10μm x 10μm (MS1-MS6) pixels these sensors provide extraordinary spatial resolution capability. The four Panchromatic bands have half pixel (2.5μm) offsets in both horizontal and vertical directions, allowing for super-resolution imaging to further enhance the resolution.
include six Multispectral bands (MS) and four Panchromatic bands (PAN), all in a single integrated CMOS die and package. With 8k columns for each multispectral band and 16k columns for each Panchromatic band along with
lateral anti-blooming (LAB), and continuous vertical clocking, the sensors guarantee exceptional images with very high MTF. With 5μm x 5μm (PAN) and 10μm x 10μm (MS1-MS6) pixels these sensors provide extraordinary spatial resolution capability. The four Panchromatic bands have half pixel (2.5μm) offsets in both horizontal and vertical directions, allowing for super-resolution imaging to further enhance the resolution.
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