X-band 30W 46% PAE GaN MMIC HPA
Description
The KX1-3046 is an X-band high-power MMIC amplifier fabricated on the GaN-on-SiC process. It operates from 8.0 – 10.5 GHz and typically provides 30W saturated output power with power-added efficiency of 46%.
The KX1-3046 can support military and commercial radar systems. It is matched to 50Ω with integrated DC blocking capacitors on both RF input and output ports.
The KX1-3046 is 100% DC and RF tested on-wafer. It is available in chip form
**Key Features**
- Frequency Range: 8.0-10.5GHz
- Small Signal Gain: 28dB
- High Pout: 30W
- High PAE: 46%
- DC bias: Vd=28V @Idq=0.6A
- Pulsed Vg: PW=100µs, DC=10%
- Chip size: 2.95x3.1x0.1mm
The KX1-3046 can support military and commercial radar systems. It is matched to 50Ω with integrated DC blocking capacitors on both RF input and output ports.
The KX1-3046 is 100% DC and RF tested on-wafer. It is available in chip form
**Key Features**
- Frequency Range: 8.0-10.5GHz
- Small Signal Gain: 28dB
- High Pout: 30W
- High PAE: 46%
- DC bias: Vd=28V @Idq=0.6A
- Pulsed Vg: PW=100µs, DC=10%
- Chip size: 2.95x3.1x0.1mm
